and AO4610l are electrically diode is co-packaged with the n-channel fetto minimize body diode losses. symbol max p-channel units v ds v v gs v i dm t j , t stg c symbol v ds i dm t j , t stg junction and storage temperature range parameter maximum schottky units -55 to 150 -55 to 150 reverse voltage 30 v continuous forward current a t a =25c i d 3 a t a =70c 2 t a =70c power dissipation t a =25c p d a continuous drain current a t a =25c i d t a =70c pulsed drain current b -30 w 8.5 6.6 30 2 1.28 -5.6 -7.1 2 1.28 absolute maximum ratings t a =25c unless otherwise noted parameter max n-channel 30 -30 20 drain-source voltage 20 gate-source voltage pulsed forward current b 20 power dissipation a t a =25c p d 2 w t a =70c 1.28 junction and storage temperature range -55 to 150 c AO4610 features n-channel p-channel v ds (v) = 30v -30v i d = 8.5a(v gs =10v) -7.1a(v gs = -10v) r ds(on) r ds(on) < 18m ? (v gs =10v) < 25m ? (v gs = -10v) < 28m ? (v gs =4.5v) < 40m ? (v gs = -4.5v) v f <0.5v@1a the AO4610 uses advanced trench technology mosfets to provide excellent r ds(on) and low gate charge. the complementary mosfets may be used in inverter and other applications. a schottky standard product AO4610 is pb-free (meets rohs & sony 259 specifications). AO4610l is a green product ordering option. AO4610 g1 s1 g2 s2/a d1 d1 d2/k d2/k 1 2 3 4 8 7 6 5 soic-8 g1 d1 s1 n-channel p -channe l g2 d2 s2 k a complementary enhancement mode field effect transistor general description identical www.freescale.net.cn 1 / 9
AO4610 symbol device typ ma x units n-ch 48 62.5 c/w n-ch 74 110 c/w r jl n-ch 35 60 c/w p-ch 48 62.5 c/w p-ch 74 110 c/w r jl p-ch 35 40 c/w schottky 47.5 62.5 c/w schottky 71 110 c/w r jl schottky 32 40 c/w r ja maximum junction-to-ambient a steady-state maximum junction-to-lead c steady-state maximum junction-to-lead c steady-state maximum junction-to-ambient a t 10s thermal characteristics: n-channel, schottky and p-channel r ja maximum junction-to-ambient a steady-state r ja maximum junction-to-ambient a steady-state parameter maximum junction-to-ambient a t 10s maximum junction-to-lead c steady-state maximum junction-to-ambient a t 10s www.freescale.net.cn 2 / 9
AO4610 symbol min typ max units bv dss 30 v 25 t j =55c i gss 100 na v gs(th) 1 1.8 3 v i d(on) 40 a 15.5 18 t j =125c 22.3 27 23 28 m ? g fs 10 23 s v sd 0.75 1 v i s 5.5 a c iss 1040 pf c oss 180 pf c rss 110 pf r g 0.7 ? q g (10v) 19.2 nc q g (4.5v) 9.36 nc q gs 2.6 nc q gd 4.2 nc t d(on) 5.2 ns t r 4.4 ns t d(off) 17.3 ns t f 3.3 ns t rr 16.7 ns q rr 6.7 nc schottky parameters v f 0.45 0.5 v 0.007 0.05 3.2 10 12 20 c t 37 pf this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. ma v r =30v, t j =125c v r =30v, t j =150c junction capacitance v r =15v forward voltage drop i f =1.0a i rm maximum reverse leakage current v r =30v v gs =0v, v ds =15v, f=1mhz v gs =0v, v ds =0v, f=1mhz switching parameters reverse transfer capacitance gate resistance output capacitance (fet+schottky) i s =1a v gs =10v, i d =8.5a body-diode+schottky forward voltage v gs =10v, v ds =15v, r l =1.8 ? , r gen =3 ? gate source charge gate drain charge turn-on delaytime turn-on rise time total gate charge v gs =10v, v ds =15v, i d =8.5a r ds(on) static drain-source on-resistance forward transconductance m ? v gs =4.5v, i d =6.6a v ds =5v, i d =8.5a gate threshold voltage v ds =v gs i d =250 a on state drain current v gs =4.5v, v ds =5v a gate-body leakage current v ds =0v, v gs =20v drain-source breakdown voltage i d =250 a, v gs =0v i dss zero gate voltage drain current v ds =24v, v gs =0v n-channel + schottky electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters maximum body-diode+schottky continuous current dynamic parameters body-diode+schottky reverse recovery charge total gate charge i f =8.5a, di/dt=100a/ s turn-off delaytime turn-off fall time body-diode+schottky reverse recovery time i f =8.5a, di/dt=100a/ s input capacitance a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev 4: july 2005 www.freescale.net.cn 3 / 9
AO4610 n-channel: typical electrical and thermal characteristic s 0 5 10 15 20 25 30 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3v 3.5v 4v 4.5v 10v 0 4 8 12 16 20 1.5 2 2.5 3 3.5 4 v gs (volts) figure 2: transfer characteristics i d (a) 14 16 18 20 22 24 26 28 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v 10 20 30 40 50 246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =8.5a 25c 125c i d =8.5a www.freescale.net.cn 4 / 9
AO4610 n-channel: typical electrical and thermal characteristic s 0 2 4 6 8 10 048121620 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 250 500 750 1000 1250 1500 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c r ss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0 .1 s 1s 10s dc r ds(on) limited t j(max) =150c t a =25c v ds =15v i d =8.5a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =62.5c/w t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, sin g le p ulse t j(max) =150c t a =25c 10 s www.freescale.net.cn 5 / 9
AO4610 symbol min typ max units bv dss -30 v -1 t j =55c -5 i gss 100 na v gs(th) -1.4 -2 -2.7 v i d(on) -30 a 20 25 t j =125c 27 33 29 40 m ? g fs 19.6 s v sd -0.7 -1 v i s -4.2 a c iss 1573 pf c oss 319 pf c rss 211 pf r g 6.7 ? q g (10v) 30.9 nc q g (4.5v) 16.1 nc q gs 8nc q gd 4.4 nc t d(on) 9.5 ns t r 8ns t d(off) 44.2 ns t f 22.2 ns t rr 25.5 ns q rr 14.7 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. p-channel electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d =-250 a, v gs =0v i dss zero gate voltage drain current v ds =-24v, v gs =0v a gate-body leakage current v ds =0v, v gs =20v m ? v gs =-4.5v, i d =-5.6a gate threshold voltage v ds =v gs i d =-250 a on state drain current v gs =-10v, v ds =-5v v ds =-5v, i d =-7.1a r ds(on) static drain-source on-resistance forward transconductance v gs =-10v, i d =-7.1a diode forward voltage i s =-1a,v gs =0v maximum body-diode continuous current output capacitance reverse transfer capacitance gate resistance dynamic parameters input capacitance v gs =0v, v ds =-15v, f=1mhz v gs =0v, v ds =0v, f=1mhz total gate charge (4.5v) gate source charge gate drain charge switching parameters total gate charge (10v) v gs =-10v, v ds =-15v, i d =-7.1a turn-on delaytime v gs =-10v, v ds =-15v, r l =2.2 ? , r gen =3 ? turn-on rise time turn-off delaytime turn-off fall time body diode reverse recovery time i f =-7.1a, di/dt=100a/ s body diode reverse recovery charge i f =-7.1a, di/dt=100a/ s a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any a given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any agiven application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev 4: july 2005 www.freescale.net.cn 6 / 9
AO4610 typical electrical and thermal characteristics: p-channe l 0 5 10 15 20 25 30 012345 -v ds (volts) fig 16: on-region characteristics -i d (a) v gs =-3v -5v -3.5v -4v -10v 0 5 10 15 20 25 30 1 1.5 2 2.5 3 3.5 4 4.5 5 -v gs (volts) figure 17: transfer characteristics -i d (a) 10 15 20 25 30 35 40 0 5 10 15 20 25 -i d (a) figure 18: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 -v sd (volts) figure 21: body-diode characteristics -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 19: on-resistance vs. junction temperature normalized on-resistance v gs =-10v v gs =-4.5v i d =-5.6a 10 20 30 40 50 60 345678910 -v gs (volts) figure 20: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =-5v v gs =-4.5v v gs =-10v i d =-7.1a 25c 125c i d =-7.1a www.freescale.net.cn 7 / 9
AO4610 typical electrical and thermal characteristics: p-channe l 0 2 4 6 8 10 0 4 8 12 16 20 24 28 32 -q g (nc) figure 22: gate-charge characteristics -v gs (volts) 0 250 500 750 1000 1250 1500 1750 2000 2250 0 5 10 15 20 25 30 -v ds (volts) figure 23: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 25: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 26: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c r ss 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -i d (amps) figure 24: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1 s 10s d c r ds(on) limited t j( m a x ) =150c, t a =25c v ds =-15v i d =-7.1a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =62.5c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 s t o n t p d www.freescale.net.cn 8 / 9
AO4610 typical electrical and thermal characteristics: schottk y 0.001 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v f (volts) figure 12: schottky forward characteristics i f (amps) 0 50 100 150 200 250 0 5 10 15 20 25 30 v ka (volts) figure 13: schottky capacitance characteristics capacitance (pf) 0.001 0.01 0.1 1 10 100 0 25 50 75 100 125 150 175 temperature (c) figure 15: schottky leakage current vs. junction temperature leakage current (ma) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 15: schottky normalized maximum transient thermal impedance z ja normalized transient thermal resistance 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 25 50 75 100 125 150 175 temperature (c) v f (volts) figure 14: schottky forward drop vs. junction temperature single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =62.5c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse f = 1mhz i f =1a 25c i f =3a v r =30v 125c t on t p d www.freescale.net.cn 9 / 9
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